Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Deveaud Benoit
Institute Of Quantum Electronics And Photonics Swiss Federal Institute Of Technology-lausanne
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SUSKI Tadeusz
Institute of High Pressure Physics PAS
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TEISSEYRE Henryk
Institute of Physics PAS
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GRZEGORY Izabella
Institute of High Pressure PAS
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Grandjean Nicolas
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Giraud Etienne
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Lefebvre Pierre
CNRS, Laboratoire Charles Coulomb, UMR5221, 34095 Montpellier, France
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Ganiere Jean-Daniel
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Dussaigne Amélie
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Phillips Richard
Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, United Kingdom
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Corfdir Pierre
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Shahmohammadi Mehran
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Grzegory Izabella
Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland
関連論文
- Ultrahigh-Speed AllnN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon with F_T = 143GHz
- 1.5-μm Intraband Transitions in PbSe Quantum Dots
- Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6
- Implementation of Spatio-Time-Resolved Cathodoluminescence Spectroscopy for Studying Local Carrier Dynamics in a Low Dislocation Density m-Plane In0.05Ga0.95N Epilayer Grown on a Freestanding GaN Substrate
- Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures
- Lateral Control of Indium Content and Wavelength of III-Nitride Diode Lasers by Means of GaN Substrate Patterning
- Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy
- Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors
- Growth of Thick GaN Layers by Hydride Vapor Phase Epitaxy on Sapphire Substrate with Internally Focused Laser Processing
- ZrO
- Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
- Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
- Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
- 1.5-μm Intraband Transitions in PbSe Quantum Dots
- Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)