Grzegory Izabella | Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland
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概要
- Grzegory Izabellaの詳細を見る
- 同名の論文著者
- Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Polandの論文著者
関連著者
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Deveaud Benoit
Institute Of Quantum Electronics And Photonics Swiss Federal Institute Of Technology-lausanne
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SUSKI Tadeusz
Institute of High Pressure Physics PAS
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TEISSEYRE Henryk
Institute of Physics PAS
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GRZEGORY Izabella
Institute of High Pressure PAS
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Grandjean Nicolas
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, CH-1015 Lausanne, Switzerland
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Giraud Etienne
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Lefebvre Pierre
CNRS, Laboratoire Charles Coulomb, UMR5221, 34095 Montpellier, France
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Ganiere Jean-Daniel
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Dussaigne Amélie
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Phillips Richard
Cavendish Laboratory, University of Cambridge, CB3 0HE Cambridge, United Kingdom
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Corfdir Pierre
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Shahmohammadi Mehran
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Grzegory Izabella
Institute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Poland
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Corfdir Pierre
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
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Shahmohammadi Mehran
Institute of Condensed Matter Physics, Ecole Polytechnique Fédérale de Lausanne, 1015 Lausanne, Switzerland
著作論文
- Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
- Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)