Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures

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We investigate Al2O3- and ZrO2/InAlN/GaN metal–oxide–semiconductor heterostructures (MOS-H) using capacitance–time transients in the temperature range of 25–300 °C. A deep-level transient spectroscopy based analysis revealed the maximum interface state density distributions $D_{\text{it}}(E)$ up to $3\times 10^{13}$ and $1\times 10^{13}$ eV-1 cm-2 for the Al2O3/InAlN and ZrO2/InAlN interface, respectively. The integral densities of interface states correlate well with the trapping-related gate-lag effect in corresponding InAlN/GaN MOS high electron mobility transistors (HEMTs). This explains the strongly reduced lag effect in ZrO2 MOS HEMTs. We assume hole trapping at oxide/InAlN interface to be a dominant effect responsible for the gate-lag effect in InAlN/GaN MOS HEMTs.
2009-09-25