Cross Sectional Ballistic Electron Emission Microscopy for Schottky Barrier Height Profiling on Heterostructures

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概要

• 論文の詳細を見る

• In this paper we describe how cross-sectional ballistic electron emission microscopy (XBEEM) can be used to measure the Schottky barrier height profile of a GaAs/AlGaAs multi heterostructure in cross-sectional geometry. By recording ballistic electron spectra across the heterostructure with a local resolution in the nm range, it is found that the measured Schottky barrier height profile is smeared out compared to the conduction band profile calculated from the sample growth parameters. We attribute this behavior to lateral band bending effects along the heterojunction. In addition, we have evidence that the barrier height profile is influenced by single impurities in the AlGaAs layers.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-03-15

著者

• Smoliner Jurgen

  Institut Fur Festkorperelektronik Technical University Of Vienna

• Strasser Gottfried

  Institut für Festkörperelektronik, TU-Wien, Floragasse 7, 1040-Wien, Austria

• Rakoczy Doris

  Institut für Festkörperelektronik, TU-Wien, Floragasse 7, 1040-Wien, Austria

• Smoliner Jürgen

  Institut für Festkörperelektronik, TU-Wien, Floragasse 7, 1040-Wien, Austria

関連論文

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• Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures
• Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors
• Cross Sectional Ballistic Electron Emission Microscopy for Schottky Barrier Height Profiling on Heterostructures

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