N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors

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概要

• 論文の詳細を見る
• 2012-04-25

著者

• Kuzmik Jan

  Institute Of Electrical Engineering Slovak Academy Of Sciences

関連論文

• Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4 and SF6
• Interface States and Trapping Effects in Al2O3- and ZrO2/InAlN/AlN/GaN Metal–Oxide–Semiconductor Heterostructures
• N-Polarity InN/GaN/InAlN High-Electron-Mobility Transistors
• Buffer-Related Degradation Aspects of Single and Double-Heterostructure Quantum Well InAlN/GaN High-Electron-Mobility Transistors

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