Lateral Control of Indium Content and Wavelength of III-Nitride Diode Lasers by Means of GaN Substrate Patterning

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InGaN Laser Diode Mini-Arrays
Lateral Control of Indium Content and Wavelength of III-Nitride Diode Lasers by Means of GaN Substrate Patterning
Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy
AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy
InN/GaN Superlattices: Band Structures and Their Pressure Dependence
Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)
InN/GaN Superlattices: Band Structures and Their Pressure Dependence

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