InGaN Laser Diode Mini-Arrays
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2011-06-25
著者
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Leszczynski Mike
Topgan Ltd.
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PERLIN Piotr
TopGaN, Ltd.
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MARONA Lucja
Institute of High Pressure Physics
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HOLC Katarzyna
TopGaN, Ltd.
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WISNIEWSKI Przemek
TopGaN, Ltd.
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SUSKI Tadek
Institute of High Pressure Physics
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CZERNECKI Robert
TopGaN, Ltd.
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NAJDA Stephen
TopGaN, Ltd.
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ZAJAC Marcin
Ammono Ltd.
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KUCHARSKI Robert
Ammono Ltd.
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Perlin Piotr
Topgan Ltd.
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Holc Katarzyna
Topgan Ltd.
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Najda Stephen
Topgan Ltd.
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Czernecki Robert
Topgan Ltd.
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Wisniewski Przemek
Topgan Ltd.
関連論文
- Structural and Optical Properties of Semipolar GaN Substrates Obtained by Ammonothermal Method
- InGaN Laser Diode Mini-Arrays
- Lateral Control of Indium Content and Wavelength of III-Nitride Diode Lasers by Means of GaN Substrate Patterning
- InN/GaN Superlattices: Band Structures and Their Pressure Dependence
- Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
- True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
- Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
- InN/GaN Superlattices: Band Structures and Their Pressure Dependence