Structural and Optical Properties of Semipolar GaN Substrates Obtained by Ammonothermal Method
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概要
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Large sizes ($9\times 12$ mm2) semipolar GaN substrates with the plane orientation of $(20\bar{2}1)$ were obtained by using the ammonothermal method. Their structural quality was investigated by using the X-ray diffraction whereas the optical quality was probed by absorptionlike (contactless electroreflectance) and emissionlike (photoluminescence) techniques. It is shown that these substrates are characterized by very narrow X-ray diffractions peaks [17 and 21 arcsec for the $(20\bar{2}1)$ and $(10\bar{1}0)$ peak, respectively] and the GaN energy gap-related transition is clearly observed in contactless electroreflectance and photoluminescence spectra. A defect-related emission is also observed in photoluminescence spectra but its intensity is much weaker that the energy-gap related emission.
- 2010-10-25
著者
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Misiewicz Jan
Institute Of Physics Wroclaw University Of Technology
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ZAJAC Marcin
Ammono Ltd.
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KUCHARSKI Robert
Ammono Ltd.
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GARCZYNSKI Jerzy
AMMONO sp. z.o.o.
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Doradzinski Roman
Ammono S.A. Czerwonego, Krzyza 2/31, 00-377 Warsaw, Poland
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Kudrawiec Robert
Institute of Physics, Wrocław University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
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Dwilinski Robert
Ammono S.A. Czerwonego, Krzyza 2/31, 00-377 Warsaw, Poland
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Sierzputowski Leszek
AMMONO sp. z.o.o., Czerwonego Krzyża 2/31, 00-377 Warsaw, Poland
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Serafinczuk Jaroslaw
Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroc$ŀ$aw, Poland
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