True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 2012-11-25
著者
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Skierbiszewski Czeslaw
Institute Of High Pressure Physics Polish Academy Of Science
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Cywinski Grzegorz
Institute Of High Pressure Physics Polish Academy Of Science
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MARONA Lucja
Institute of High Pressure Physics
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Perlin Piotr
Institute Of High Pressure Physics Pas
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Sawicka Marta
Institute Of High Pressure Physics Polish Academy Of Sciences
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Wisniewski Przemyslaw
Institute Of High Pressure Physics Polish Academy Of Sciences
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Porowski Sylwester
Institute Of High Pressure Physics Polish Academy Of Sciences
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Muziol Grzegorz
Institute Of High Pressure Physics Polish Academy Of Sciences
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Siekacz Marcin
Institute Of High Pressure Physics Polish Academy Of Sciences
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Wiśniewski Przemysław
Institute of High Pressure Physics, Polish Academy of Sciences, ul. Sokołowska 29/37, 01-142 Warszawa, Poland
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Turski Henryk
Institute Of High Pressure Physics Polish Academy Of Sciences
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WOLNY Pawel
Institute of High Pressure Physics, Polish Academy of Sciences
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ALBRECHT Martin
Leibniz Institute for Crystal Growth
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WASILEWSKI Zbigniew
Department of Electrical and Computer Engineering, Waterloo Institute for Nanotechnology, University of Waterloo
関連論文
- Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths
- InGaN Laser Diode Mini-Arrays
- Lateral Control of Indium Content and Wavelength of III-Nitride Diode Lasers by Means of GaN Substrate Patterning
- AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy
- True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
- Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy
- True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
- Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)