Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy
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概要
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In this work, we study the growth mechanisms of InGaN in plasma-assisted molecular beam epitaxy (PAMBE). We demonstrate that for a metal-rich regime, in the range in which growth temperature limits the maximum In content, growth rate depends on gallium flux. This mechanism was investigated by the growth of InGaN/InGaN multi quantum wells (MQWs). We show that for constant growth temperature and nitrogen flux, the growth rate of MQWs decreases with decreasing gallium flux. We demonstrate also that at constant growth temperature and gallium flux, the In content in InGaN layers depends on nitrogen flux. We present an InGaN growth model that describes indium incorporation as a function of gallium and nitrogen fluxes, assuming that nonequivalent atomic step edges play an important role in indium incorporation mechanisms in PAMBE.
- 2013-08-25
著者
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Skierbiszewski Czeslaw
Institute Of High Pressure Physics Polish Academy Of Science
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Sawicka Marta
Institute Of High Pressure Physics Polish Academy Of Sciences
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Porowski Sylwester
Institute Of High Pressure Physics Polish Academy Of Sciences
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Siekacz Marcin
Institute Of High Pressure Physics Polish Academy Of Sciences
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Turski Henryk
Institute Of High Pressure Physics Polish Academy Of Sciences
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Skierbiszewski Czeslaw
Institute of High Pressure Physics, Polish Academy of Sciences, Sokoł\add{-0.2}owska 29/37, PL-01-142 Warsaw, Poland
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Wasilewski Zbig
Department of Electrical and Computer Engineering, Waterloo Institute of Nanotechnology, University of Waterloo, Ontario N2L 3G1, Canada
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