Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Skierbiszewski Czeslaw
Institute Of High Pressure Physics Polish Academy Of Science
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Sawicka Marta
Institute Of High Pressure Physics Polish Academy Of Sciences
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Porowski Sylwester
Institute Of High Pressure Physics Polish Academy Of Sciences
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Siekacz Marcin
Institute Of High Pressure Physics Polish Academy Of Sciences
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Turski Henryk
Institute Of High Pressure Physics Polish Academy Of Sciences
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Porowski Sylwester
Institute of High Pressure Physics, Polish Academy of Sciences, Sokoł\add{-0.2}owska 29/37, PL-01-142 Warsaw, Poland
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Wasilewski Zbig
Department of Electrical and Computer Engineering, Waterloo Institute of Nanotechnology, University of Waterloo, Ontario N2L 3G1, Canada
関連論文
- Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths
- AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy
- True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
- Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy
- True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
- Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)