Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths
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概要
- 論文の詳細を見る
- 2009-11-25
著者
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MISIEWICZ Jan
Institute of Physics, Wroclaw University of Technology
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Misiewicz Jan
Institute Of Physics Wroclaw University Of Technology
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CYWINSKI Grzegorz
Institute of High Pressure Physics, Polish Academy of Science
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KUDRAWIEC Robert
Institute of Physics, Wroclaw University of Technology
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RZODKIEWICZ Witold
Institute of Electron Technology
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KRYSKO Marcin
Institute of High Pressure Physics, Polish Academy of Science
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LITWIN-STASZEWSKA Elzbieta
Institute of High Pressure Physics, Polish Academy of Science
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LUCZNIK Boleslaw
Institute of High Pressure Physics, Polish Academy of Science
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SKIERBISZEWSKI Czeslaw
Institute of High Pressure Physics, Polish Academy of Science
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Krysko Marcin
Institute Of High Pressure Physics Polish Academy Of Science
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Skierbiszewski Czeslaw
Institute Of High Pressure Physics Polish Academy Of Science
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$Ŀ$ucznik Boles$ŀ$aw
Institute of High Pressure Physics, Polish Academy of Science, Soko$ŀ$owska 29/37, 01-142 Warsaw, Po
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Skierbiszewski Czes$ŀ$aw
Institute of High Pressure Physics, Polish Academy of Science, Soko$ŀ$owska 29/37, 01-142 Warsaw, Po
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Cywinski Grzegorz
Institute Of High Pressure Physics Polish Academy Of Science
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Litwin-staszewska Elzbieta
Institute Of High Pressure Physics Polish Academy Of Science
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Kudrawiec Robert
Institute of Physics, Wrocław University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
関連論文
- Immersion Layer in Columnar Quantum Dash Structure as a Polarization Insensitive Light Emitter at 1.55μm
- Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths
- Effect of Annealing-Induced Interdiffusion on the Electronic Structure of Mid Infrared Emitting GaInAsSb/AlGaInAsSb Quantum Wells
- Fourier Transformed Photoreflectance and Photoluminescence of Mid Infrared GaSb-Based Type II Quantum Wells
- Structural and Optical Properties of Semipolar GaN Substrates Obtained by Ammonothermal Method
- Fast Differential Reflectance Spectroscopy of Semiconductor Structures for Infrared Applications by Using Fourier Transform Spectrometer
- Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy
- AlGaN-Free Laser Diodes by Plasma-Assisted Molecular Beam Epitaxy
- Growth-Temperature Dependence of Wetting Layer Formation in High Density InGaAs/GaAs Quantum Dot Structures Grown by Droplet Epitaxy
- Theoretical Studies of the Influence of Temperature on Photoluminescence Dynamics in GaInNAs/GaAs Quantum Wells
- Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
- True-Blue Nitride Laser Diodes Grown by Plasma-Assisted Molecular Beam Epitaxy
- Quantum Confinement in Thin GaN Cap Layers Deposited on AlGaN/GaN Heterostructures : The Issue of Polar Surface Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
- Role of Nonequivalent Atomic Step Edges in the Growth of InGaN by Plasma-Assisted Molecular Beam Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)