Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)
スポンサーリンク
概要
著者
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Liang Hu
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Cheng Kai
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Borghs Gustaaf
Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium
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Lieten Ruben
Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium
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Baranowski Michał
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
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Kudrawiec Robert
Institute of Physics, Wrocław University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
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Kudrawiec Robert
Institute of Physics, Wrocł\add{-0.4}aw University of Technology, 50-370 Wrocł\add{-0.4}aw, Poland
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Latkowska Magdalena
Institute of Physics, Wrocł\add{-0.4}aw University of Technology, 50-370 Wrocł\add{-0.4}aw, Poland
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Zhang Liyang
Department of Physics and Astronomy, K.U. Leuven, 3001 Leuven, Belgium
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- AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility
- Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
- Theoretical Studies of the Influence of Temperature on Photoluminescence Dynamics in GaInNAs/GaAs Quantum Wells
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
- Quantum Confinement in Thin GaN Cap Layers Deposited on AlGaN/GaN Heterostructures : The Issue of Polar Surface Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)