Quantum Confinement in Thin GaN Cap Layers Deposited on AlGaN/GaN Heterostructures : The Issue of Polar Surface Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Kudrawiec Robert
Institute of Physics, Wrocław University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
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Gladysiewicz Marta
Institute of Physics, Wrocław University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
関連論文
- Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths
- Structural and Optical Properties of Semipolar GaN Substrates Obtained by Ammonothermal Method
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
- Quantum Confinement in Thin GaN Cap Layers Deposited on AlGaN/GaN Heterostructures : The Issue of Polar Surface Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)