Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy

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概要

• 論文の詳細を見る

• Various multiple quantum well structures with three main geometries of triangular, isosceles trapezoidal, and right-angled trapezoidal shape have been designed and fabricated on 4-in. sapphire substrates by metal organic vapor phase epitaxy. Photoluminescence measurements reveal the influence of the quantum well structures on the emission wavelength and the internal quantum efficiency. We observe less decrease in the internal quantum efficiency with increasing emission wavelength for isosceles trapezoidal shaped structures with respect to conventional structures. A significant enhancement in efficiency of more than 50% is observed at 475 nm emission for the isosceles trapezoidal shaped structures compared to the conventional structures.

• 2013-08-25

著者

• Liang Hu

  IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Cheng Kai

  IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Borghs Gustaaf

  Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium

• Zhang Liyang

  Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium

• Lieten Ruben

  Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium

• Baranowski Michał

  Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

• Kudrawiec Robert

  Institute of Physics, Wrocław University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland

• Kudrawiec Robert

  Institute of Physics, Wrocł\add{-0.4}aw University of Technology, 50-370 Wrocł\add{-0.4}aw, Poland

• Latkowska Magdalena

  Institute of Physics, Wrocł\add{-0.4}aw University of Technology, 50-370 Wrocł\add{-0.4}aw, Poland

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• Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
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