Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface

スポンサーリンク

概要

• 論文の詳細を見る

• We report on the effect of light-induced deep-level defect activation at the AlN/Si interface of AlGaN/GaN power devices grown on silicon substrates for high-voltage applications. This effect appears as a bump in the $I$--$V$ characteristic at high voltage (HV) when the device is pinched off and exposed to the light. No bump is detected when the device is measured in the dark. We investigate its spectral sensitivity under illumination with different wavelengths. Importantly, this effect can be eliminated by removing the Si substrate. This light-induced bump is related to a charging and discharging mechanism of deep acceptor-like level defects.

• 2011-09-25

著者

• Stesmans Andre

  Departement Natuurkunde Katholieke Universiteit Leuven

• Visalli Domenica

  Department Of Physics University Of Leuven

• Nguyen Anh

  Department Of Physics University Of Leuven

• Leys Maarten

  IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Borghs Gustaaf

  Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium

• Simoen Eddy

  IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

• Van Hove

  Imec, Kapeldreef 75, 3001 Leuven, Belgium

• Derluyn Joff

  Imec, Kapeldreef 75, 3001 Leuven, Belgium

• Srivastava Puneet

  Imec, Kapeldreef 75, 3001 Leuven, Belgium

• Geens Karen

  Imec, Kapeldreef 75, 3001 Leuven, Belgium

• Degroote Stefan

  Imec, Kapeldreef 75, 3001 Leuven, Belgium

• Germain Marianne

  Imec, Kapeldreef 75, 3001 Leuven, Belgium

関連論文

• Atelectatic children treated with intrapulmonary percussive ventilation via a face mask : Clinical trial and literature overview
• On the Derivation of the Surface Spin-Flip Probability from Transmission-Electron Spin Resonance in Copper
• Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
• Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
• Impact of Radiation-Induced Back-Channel Leakage and Back-Gate Bias on Drain Current Transients of Thin-Gate-Oxide Partially Depleted Silicon-On-Insulator n-channel Metal–Oxide–Semiconductor Field-Effect Transistors
• AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility
• Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
• Charge Trapping in SiOx/ZrO2 and SiOx/TiO2 Gate Dielectric Stacks
• Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology
• Deep Levels in High-Temperature 1 MeV Electron-Irradiated n-Type Czochralski Silicon
• Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
• Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)

もっと見る 閉じる

スポンサーリンク