Borghs Gustaaf | Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium
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概要
- Borghs Gustaafの詳細を見る
- 同名の論文著者
- Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgiumの論文著者
関連著者
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Borghs Gustaaf
Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium
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Liang Hu
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Cheng Kai
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Lieten Ruben
Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium
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Leys Maarten
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Zhang Liyang
Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium
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Baranowski Michał
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
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Kudrawiec Robert
Institute of Physics, Wrocław University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland
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Kudrawiec Robert
Institute of Physics, Wrocł\add{-0.4}aw University of Technology, 50-370 Wrocł\add{-0.4}aw, Poland
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Latkowska Magdalena
Institute of Physics, Wrocł\add{-0.4}aw University of Technology, 50-370 Wrocł\add{-0.4}aw, Poland
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Zhang Liyang
Department of Physics and Astronomy, K.U. Leuven, 3001 Leuven, Belgium
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Stesmans Andre
Departement Natuurkunde Katholieke Universiteit Leuven
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Visalli Domenica
Department Of Physics University Of Leuven
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Nguyen Anh
Department Of Physics University Of Leuven
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Simoen Eddy
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
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Van Hove
Imec, Kapeldreef 75, 3001 Leuven, Belgium
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Derluyn Joff
Imec, Kapeldreef 75, 3001 Leuven, Belgium
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Srivastava Puneet
Imec, Kapeldreef 75, 3001 Leuven, Belgium
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Geens Karen
Imec, Kapeldreef 75, 3001 Leuven, Belgium
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Degroote Stefan
Imec, Kapeldreef 75, 3001 Leuven, Belgium
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Germain Marianne
Imec, Kapeldreef 75, 3001 Leuven, Belgium
著作論文
- Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
- Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
- Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)