Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures

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概要

• 論文の詳細を見る

• The impact of polarization fields in multiple quantum well (MQW) structures is revealed by photoluminescence measurements and band diagram calculations. We observe a blue shift of luminous energy of 33 meV and an increased light emission of 19% for InxGa1-xN/InyGa1-yN MQWs with respect to InxGa1-xN/GaN MQWs. Band diagram calculations show a lowering of the polarization fields and an increase in wave function overlap of 22% by adding indium into the barriers. We therefore attribute the observed blue shift and increased emission to an improved electron and hole wave function overlap due to lower electric fields in InxGa1-xN/InyGa1-yN structures.

• 2012-03-25

著者

• Liang Hu

  IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Cheng Kai

  IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Leys Maarten

  IMEC, Kapeldreef 75, 3001 Leuven, Belgium

• Borghs Gustaaf

  Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium

• Zhang Liyang

  Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium

• Lieten Ruben

  Department of Physics and Astronomy, Katholieke Universiteit, 3001 Leuven, Belgium

• Zhang Liyang

  Department of Physics and Astronomy, K.U. Leuven, 3001 Leuven, Belgium

関連論文

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• AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility
• Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
• Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
• Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)

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