AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility

スポンサーリンク

概要

論文の詳細を見る
2012-01-25

著者

関連論文

Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon
High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric
Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
Investigation of Light-Induced Deep-Level Defect Activation at the AlN/Si Interface
AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility
Photoluminescence Studies of Polarization Effects in InGaN/(In)GaN Multiple Quantum Well Structures
W versus Co--Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes
Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology
Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy
Design and Optical Characterization of Novel InGaN/GaN Multiple Quantum Well Structures by Metal Organic Vapor Phase Epitaxy (Special Issue : Recent Advances in Nitride Semiconductors)

もっと見る

スポンサーリンク