Bender Hugo | IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

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著作論文

High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric
AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility
W versus Co--Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes
Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology

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