Leadley David | Department Of Physics University Of Warwick

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High Hole Mobility in 65 nm Strained Ge p-Channel Field Effect Transistors with HfO2 Gate Dielectric
Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process
Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process

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