Growth of Smooth, Low-Defect Germanium Layers on (111) Silicon via an Intermediate Islanding Process
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概要
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Epitaxial growth of thick Ge layers on a (111)-Si substrate has been investigated. We demonstrate that the residual compressive strain in a thin, partially relaxed Ge seed layer can be exploited to promote an intermediate islanding step, significantly reducing the threading dislocation density ({\sim}3\times 10^{8} cm-2) and almost entirely suppressing stacking fault formation. The higher Ge growth rate on the {113} sidewalls of the islands compared to the (111) top surface results in a smooth layer with a low rms surface roughness of 2 nm. Such layers have the potential to be extremely important in realizing next-generation high-mobility n-channel transistors.
- 2012-07-25
著者
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Whall Terry
Department Of Physics University Of Warwick
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Nguyen Van
Department Of Anesthesiology University Of Virginia Health System
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Parker Evan
Department Of Physics University Of Warwick
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Myronov Maksym
Department Of Physics University Of Warwick
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Dobbie Andy
Department Of Physics University Of Warwick
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Leadley David
Department Of Physics University Of Warwick
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Nguyen Van
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
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Parker Evan
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
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Myronov Maksym
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
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Whall Terry
Department of Physics, University of Warwick, Coventry CV4 7AL, United Kingdom
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