W versus Co--Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes

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In this work we provide a comprehensive evaluation of a novel, low-resistance Co--Al alloy vs W to fill aggressively scaled gates with high aspect-ratios [gate height (H_{\text{gate}}) {\sim}50{\mbox{--}}60 nm, gate length (L_{\text{gate}}) {\geq}20{\mbox{--}}25 nm]. We demonstrate that, with careful liner/barrier materials selection and tuning, well-behaved devices are obtained, showing: tight gate resistance (R_{\text{gate}}) distributions down to L_{\text{gate}}\sim 20 nm, low threshold voltage (V_{\text{T}}) values, comparable DC and bias temperature instability (BTI) behavior, and improved RF response. The impact of fill-metals intrinsic stress, including the presence of occasional voids in narrow W-gates, on devices fabrication and performance is also explored.
2013-04-25