Dielectric Reliability of 50 nm Half Pitch Structures in Aurora\textregistered LK
スポンサーリンク
概要
- 論文の詳細を見る
The dielectric reliability of Aurora\textregistered LK ($k = 3.0$) material has been evaluated on a 50 nm half pitch test structure. These were fabricated using a double patterning scheme and TiN metal hard mask. The introduction of a suitable post-etch residue removal step and close-coupled processing between Cu electroplating and chemical mechanical polishing were found to be key for achieving high yield. Median time-dependent dielectric lifetime of 10 years is reached at an electrical field of 1.4 MV/cm, comparable to earlier reported results with SiO2 as dielectric. The reliability performance is found to be significantly layout dependent with corners being weak points due to local field enhancement.
- 2009-04-25
著者
-
Beyer Gerald
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Struyf Herbert
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Demuynck Steven
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Kim Honggun
Samsung Electronics, San 16 Banwol-dong, Hwasung, Gyeonnggi-do, 445-701, Korea
-
Huffman Craig
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Darnon Maxime
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Versluijs Janko
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Claes Martine
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Vereecke Guy
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Verdonck Patrick
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Volders Henny
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Heylen Nancy
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
Kellens Kristof
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
-
De Roest
ASM Belgium, Kapeldreef 75, B-3001, Belgium
-
Sprey Hessel
ASM Belgium, Kapeldreef 75, B-3001, Belgium
-
Claes Martine
IMEC, 75 Kapeldreef, 3001 Leuven, Belgium
-
Vereecke Guy
IMEC, 75 Kapeldreef, 3001 Leuven, Belgium
関連論文
- Application of a Nano-Mechanical Sensor to Monitor Stress in Copper Damascene Interconnects
- Influence of the UV cure on advanced plasma enhanced chemical vapour deposition low-k materials (Special issue: Advanced metallization for ULSI applications)
- Advanced Organic Polymer for the Aggressive Scaling of Low-$k$ Materials
- Integration and Dielectric Reliability of 30 nm Half Pitch Structures in Aurora\textregistered LK HM
- Dielectric Reliability of 50 nm Half Pitch Structures in Aurora\textregistered LK
- Integration of Porogen-Based Low-$k$ Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-$k$ Damage and Reliability
- Alternative Photoresist Removal Process to Minimize Damage of Low-$k$ Material Induced by Ash Plasma
- W versus Co--Al as Gate Fill-Metal for Aggressively Scaled Replacement High-k/Metal Gate Devices for (Sub-)22 nm Technology Nodes
- Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology