Integration of Porogen-Based Low-$k$ Films: Influence of Capping Layer Thickness and Long Thermal Anneals on Low-$k$ Damage and Reliability

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This paper discusses integration aspects of a porous low-$k$ film ($k \sim 2.45$) cured with a broadband UV lamp. Different process splits are discussed which could contribute to avoid integration induced damage and improve reliability. The main factor contributing to a successful integration is the presence of a thick (protecting) cap layer partially remaining after chemical mechanical polishing (CMP), which leads to yielding structures with a $k_{\text{eff}}$ of ${\sim}2.6$, a breakdown voltage of ${\sim}6.9$ MV/cm and time dependent dielectric breakdown (TDDB) lifetimes in the excess of 100 years. Long thermal anneals restore the $k$-value but degrade lifetime.
2010-05-25