High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-09-15

著者

• Vanhellemont J

  Wacker Siltronic Ag Burghausen Deu

• Vanhellemont Jan

  Wacker Siltronic Ag

• BENDER Hugo

  IMEC

• SCHMOLKE Rudiger

  Wacker Siltronic AG

関連論文

• Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
• High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon
• Conditions for the Formation of Ring-Like Distributed Stacking Faults in CZ-Si Wafers
• Observation of Extremely Low Defect Densities in Silicon Wafers
• Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
• Fabrication and Characterization of Artificial Crystal Originated Particles
• AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility

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