Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-10-15
著者
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Chollet F
Univ. Franche‐comte Besancon Fra
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Bender H
Imec Leuven Bel
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VATEL Olivier
IMEC
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VERHAVERBEKE Steven
IMEC
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BENDER Hugo
IMEC
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CAYMAX Matty
IMEC
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CHOLLET Frederic
CNET
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VERMEIRE Bert
IMEC
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MERTENS Paul
IMEC
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ANDRE Elie
CNET
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HEYNS Marc
IMEC
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Andre E
France Telecom Meylan Fra
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Vatel Olivier
Centre National D'etudes Des Telecommunications
関連論文
- Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
- High Resolution Structure Imaging of Octahedral Void Defects in As-Grown Czochralski Silicon
- H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
- Charge Trapping in SiO_x/ZrO_2 and SiO_x/TiO_2 Gate Dielectric Stacks
- Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process
- Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
- Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
- Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
- Roughness Assessment of Polysilicon Using Power Spectral Density
- AlGaN/GaN/AlGaN Double Heterostructures Grown on 200mm Silicon (111) Substrates with High Electron Mobility