H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-02-28

著者

• MERTENS Paul

  IMEC

• HEYNS Marc

  IMEC

• Hatcher Zach

  Ashland Chemical

• Mertens P

  Interuniversity Microelectronics Center

• Heyns M

  Interuniv. Microelectronics Center Leuven Bel

• MEURIS Marc

  IMEC vzw

• Schmidt Harald

  IMEC

• Rotondaro Antonio

  IMEC

• Hurd Trace

  Texas Instruments

• Hurd Trace

  Texas Instruments:(present Address)imec

• Meuris Marc

  Imec

関連論文

• Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
• Stress in Thin Micro-Zone-Molten Crystalline Silicon Films on Solid Substrates
• Current-Voltage Characteristics of Gate Oxides after Hard Breakdown
• Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
• Breakdown and Recovery of Thin Gate Oxides
• Fabrication and Characterization of Artificial Crystal Originated Particles
• Impact of Organic Contamination on Thin Gate Oxide Quality
• H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
• Charge Trapping in SiO_x/ZrO_2 and SiO_x/TiO_2 Gate Dielectric Stacks
• Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process
• Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
• Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
• Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
• A Static Model for Scratches Generated during Aluminum Chemical-Mechanical Polishing Process : Orbital Technology

もっと見る 閉じる

スポンサーリンク