HEYNS Marc | IMEC

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概要

• 同名の論文著者
• IMECの論文著者

関連著者

• HEYNS Marc

  IMEC

• Heyns Marc

  Interuniversity Microelectronics Centre

• Heyns M

  Imec Leuven Bel

• Degraeve Robin

  Imec

• Depas Michel

  Imec Vzw

• Nigam Tanya

  Imec

• GROESENEKEN Guido

  IMEC

• DEPAS Michel

  Interuniversity Microelectronics Centre

• MERTENS Paul

  IMEC

• Depas Michel

  IMEC

• Chollet F

  Univ. Franche‐comte Besancon Fra

• Bender H

  Imec Leuven Bel

• VATEL Olivier

  IMEC

• VERHAVERBEKE Steven

  IMEC

• BENDER Hugo

  IMEC

• CAYMAX Matty

  IMEC

• CHOLLET Frederic

  CNET

• VERMEIRE Bert

  IMEC

• ANDRE Elie

  CNET

• Hatcher Zach

  Ashland Chemical

• Andre E

  France Telecom Meylan Fra

• Mertens P

  Interuniversity Microelectronics Center

• Verhaverbeke S

  Imec Kapeldreef

• Heyns M

  Interuniv. Microelectronics Center Leuven Bel

• Alay Josep-lluis

  Imec Kapeldreef : Lcmm Universitat De Barcelona

• Vatel Olivier

  Centre National D'etudes Des Telecommunications

• MEURIS Marc

  IMEC vzw

• Schmidt Harald

  IMEC

• Rotondaro Antonio

  IMEC

• Hurd Trace

  Texas Instruments

• Houssa Michel

  Department Of Physics Katholieke Universiteit Leuven

• NAILI Mohamed

  IMEC

• STESMANS Andre

  Department of Physics, Katholieke Universiteit Leuven

• ALAY Josep-Lluis

  IMEC, Kapeldreef

• VERHAVERBEKE Steven

  IMEC, Kapeldreef

• VANDERVORST Wilfried

  IMEC, Kapeldreef

• HEYNS Marc

  IMEC, Kapeldreef

• DEGRAEVE Robin

  Interuniversity Microelectronics Centre

• NIGAM Tanya

  Interuniversity Microelectronics Centre

• GROESENEKEN Guido

  Interuniversity Microelectronics Centre

• Vandervorst W

  Insys Leuven Bel

• Hurd Trace

  Texas Instruments:(present Address)imec

• Meuris Marc

  Imec

• Heyns Marc

  Interuniversitary Micro-Electronics Center

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著作論文

• Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
• H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
• Charge Trapping in SiO_x/ZrO_2 and SiO_x/TiO_2 Gate Dielectric Stacks
• Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process
• Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
• Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
• Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime

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