Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-01-30

著者

• HEYNS Marc

  IMEC

• Verhaverbeke S

  Imec Kapeldreef

• Heyns Marc

  Interuniversity Microelectronics Centre

• Alay Josep-lluis

  Imec Kapeldreef : Lcmm Universitat De Barcelona

• Heyns M

  Imec Leuven Bel

• ALAY Josep-Lluis

  IMEC, Kapeldreef

• VERHAVERBEKE Steven

  IMEC, Kapeldreef

• VANDERVORST Wilfried

  IMEC, Kapeldreef

• HEYNS Marc

  IMEC, Kapeldreef

• Vandervorst W

  Insys Leuven Bel

関連論文

• Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
• Analysis of Ultra-Thin HfO_2/SiON/Si(001) : Comparison of Three Different Techniques
• Current-Voltage Characteristics of Gate Oxides after Hard Breakdown
• Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
• Breakdown and Recovery of Thin Gate Oxides
• Fabrication and Characterization of Artificial Crystal Originated Particles
• H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
• Charge Trapping in SiO_x/ZrO_2 and SiO_x/TiO_2 Gate Dielectric Stacks
• Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process
• Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
• Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
• Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
• Silicide Engineering to Boost Si Tunnel Transistor Drive Current
• Aluminum Implantation in Germanium : Uphill Diffusion, Electrical Activation, and Trapping
• Charge Trapping in SiOx/ZrO2 and SiOx/TiO2 Gate Dielectric Stacks
• The Effect of Backside Particles on Substrate Topography

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