Charge Trapping in SiO_x/ZrO_2 and SiO_x/TiO_2 Gate Dielectric Stacks

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-04-01

著者

• HEYNS Marc

  IMEC

• Houssa Michel

  Department Of Physics Katholieke Universiteit Leuven

• NAILI Mohamed

  IMEC

• STESMANS Andre

  Department of Physics, Katholieke Universiteit Leuven

関連論文

• Atomic Force Microscopy and Infrared Spectroscopy Studies of Hydrogen Baked Si Surfaces
• H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
• Charge Trapping in SiO_x/ZrO_2 and SiO_x/TiO_2 Gate Dielectric Stacks
• Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process
• Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
• Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
• Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
• Charge Trapping in SiOx/ZrO2 and SiOx/TiO2 Gate Dielectric Stacks

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