Current-Voltage Characteristics of Gate Oxides after Hard Breakdown
スポンサーリンク
概要
- 論文の詳細を見る
- 2001-09-25
著者
-
Mertens P
Interuniversity Microelectronics Center
-
Heyns M
Interuniv. Microelectronics Center Leuven Bel
-
Heyns Marc
Interuniversity Microelectronics Centre
-
MERTENS Paul
Interuniversitair Micro-Electronica Centrum
-
BEARDA Twan
Interuniversitary Micro-Electronics Center
-
WOERLEE Pierre
University of Twente
-
WALLINGA Hans
University of Twente
-
Bearda T
Interuniv. Microelectronics Center Leuven Bel
-
Mertens Paul
Interuniversity Microelectronics Center
-
Heyns Marc
Interuniversitary Micro-Electronics Center
関連論文
- Stress in Thin Micro-Zone-Molten Crystalline Silicon Films on Solid Substrates
- Current-Voltage Characteristics of Gate Oxides after Hard Breakdown
- Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
- Breakdown and Recovery of Thin Gate Oxides
- Fabrication and Characterization of Artificial Crystal Originated Particles
- Impact of Organic Contamination on Thin Gate Oxide Quality
- H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
- Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process
- Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
- Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
- Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
- Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime