Impact of Organic Contamination on Thin Gate Oxide Quality
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-09-15
著者
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Mertens P
Interuniversity Microelectronics Center
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Depas Michel
Imec Vzw
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Heyns M
Interuniv. Microelectronics Center Leuven Bel
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Gendt Stefan
Imec Vzw
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KNOTTER D.
Philips Research
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KENIS Karine
IMEC vzw
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MEURIS Marc
IMEC vzw
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MERTENS Paul
IMEC vzw
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HEYNS Marc
IMEC vzw
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De Gendt
Imec Kapeldreef
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Knotter D.Martin
Philips Research
関連論文
- Stress in Thin Micro-Zone-Molten Crystalline Silicon Films on Solid Substrates
- Current-Voltage Characteristics of Gate Oxides after Hard Breakdown
- Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
- Breakdown and Recovery of Thin Gate Oxides
- Fabrication and Characterization of Artificial Crystal Originated Particles
- Impact of Organic Contamination on Thin Gate Oxide Quality
- H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
- Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
- Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
- Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
- A Static Model for Scratches Generated during Aluminum Chemical-Mechanical Polishing Process : Orbital Technology
- Degradation and Breakdown of Sub-1nm EOT HfO_2/Metal Gate Stacks
- Degradation and Breakdown of Sub-1nm EOT HfO_2/Metal Gate Stacks
- Reliability Issues in High-k Stacks
- Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application