Reliability Issues in High-k Stacks
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
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Roussel Ph.
Imec Kapeldreef
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CARTIER E.
IBM Semiconductor Research and Development Center
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GROESENEKEN G.
IMEC
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DEGRAEVE R.
IMEC
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KAUERAUF T.
IMEC
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DE GENDT
IMEC
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KAUERAUF T.
IMEC, Kapeldreef
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DE GENDT
IMEC, Kapeldreef
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CRUPI F.
University of Calabria
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HOUSSA M.
IMEC
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KWAK D.
Samsung Electronics c/o IMEC
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KERBER A.
Infineon Technologies
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AUTRAN J.
University of Provence
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POURTOIS G.
IMEC
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PANTISANO L.
IMEC
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HEYNS M.
IMEC
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De Gendt
Imec Kapeldreef
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Cartier E.
Ibm
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Degraeve R.
Imec Kapeldreef
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Kauerauf T.
Imec Kapeldreef
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Groeseneken G.
Imec And Also At Ku
関連論文
- Impact of Organic Contamination on Thin Gate Oxide Quality
- Gate First PFET Poly-Si/TiN/Al_2O_3 Gate Stacks with Inversion Thicknesses Less than 15A for High Performance or Low Power CMOS Applications
- Degradation and Breakdown of Sub-1nm EOT HfO_2/Metal Gate Stacks
- Degradation and Breakdown of Sub-1nm EOT HfO_2/Metal Gate Stacks
- Reliability Issues in High-k Stacks
- Feasibility analysis of direct tunneling through medium-κ dielectrics for embedded RAM applications
- Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application
- Characteristics and Correlated Fluctuations of the Gate and Substrate Current after Oxide Soft-Breakdown
- Oxygen-Vacancy-Induced V_t shift in La-containing Devices
- Towards metal gate/high-k dielectric integration for high performance CMOS technology
- Charge Trapping in SiO_x/ZrO_2 Gate Dielectric Stacks