Towards metal gate/high-k dielectric integration for high performance CMOS technology

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概要

• 論文の詳細を見る
• 2006-09-13

著者

• CARTIER E.

  IBM Semiconductor Research and Development Center

• Cartier E.

  Ibm Semiconductor Research And Development Center (srdc)

関連論文

• Gate First PFET Poly-Si/TiN/Al_2O_3 Gate Stacks with Inversion Thicknesses Less than 15A for High Performance or Low Power CMOS Applications
• Reliability Issues in High-k Stacks
• Towards metal gate/high-k dielectric integration for high performance CMOS technology

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