Gate First PFET Poly-Si/TiN/Al_2O_3 Gate Stacks with Inversion Thicknesses Less than 15A for High Performance or Low Power CMOS Applications

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2007-09-19

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関連論文

Gate First PFET Poly-Si/TiN/Al_2O_3 Gate Stacks with Inversion Thicknesses Less than 15A for High Performance or Low Power CMOS Applications
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