A Study of NBTI and PBTI (Charge Trapping) in High k Stacks with NiSi, TiN, Re Gates

スポンサーリンク

概要

論文の詳細を見る
2007-09-19

著者

NARAYANAN V.
IBM Semiconductor Research and Development Center
Paruchuri V.
Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C
ZAFAR S.
IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen
KIM Y.
IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen
DORIS B.
IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen
CALLEGARI A.
IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen
STATHIS J.
IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen
NING T.
IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen
Callegari A.
Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C
Kim Y.
Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C
Narayanan V.
Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C
Zafar S.
Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C
Stathis J.
Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C
Ning T.
Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C

関連論文

スポンサーリンク