Narayanan V. | Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C

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概要

• NARAYANAN V.の詳細を見る
• 同名の論文著者
• Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research Cの論文著者

関連著者

• Narayanan V.

  Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C

• NARAYANAN V.

  IBM Semiconductor Research and Development Center

• Paruchuri V.

  Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C

• 西村 尚志

  (株)東芝セミコンダクター社半導体研究開発センタープロセス技術推進センター

• 濱口 雅史

  株式会社東芝 セミコンダクター社 システムlsi事業部

• 松岡 史倫

  東芝セミコンダクター社システムLSI事業部

• 高須 靖夫

  (株)東芝セミコンダクタ社プロセス技術開発センター

• 宮下 桂

  東芝

• 松岡 史倫

  東芝

• ARNAUD F.

  STMicroelectronics

• ELLER M.

  Infineon Technologies

• Linder B.

  Ibm Semiconductor Research And Development Center

• PARUCHURI V.

  IBM Semiconductor Research and Development Center

• CARTIER E.

  IBM Semiconductor Research and Development Center

• KANAKASABAPATHY S.

  IBM Semiconductor Research and Development Center

• ZAFAR S.

  IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen

• KIM Y.

  IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen

• DORIS B.

  IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen

• CALLEGARI A.

  IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen

• STATHIS J.

  IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen

• NING T.

  IBM Semiconductor Research & Development Center (SRDC), Research Division, T. J. Watson Research Cen

• Callegari A.

  Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C

• Kim Y.

  Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C

• Zafar S.

  Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C

• Stathis J.

  Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C

• Ning T.

  Ibm Semiconductor Research & Development Center (srdc) Research Division T. J. Watson Research C

• Kohler S.

  Stmicroelectronics

• Kaste E.

  Ibm

• Celik M.

  Stmicroelectronics

• 濱口 雅史

  東芝

• Nair D.

  IBM

• Jaeger D.

  IBM

• 西村 尚志

  東芝

• Li W.

  IBM

• Na M-H.

  IBM

• Bernicot C.

  STMicroelectronics

• Liang J.

  Infineon Technologies

• Stahrenberg K.

  Infineon Technologies

• Kim K.

  Infineon Technologies

• Lee K-C.

  Samsung Electronics

• Iwamoto T.

  Renesas Electronics

• Teh Y-W.

  GLOBALFOUNDRIES Singapore

• 森 貞之

  東芝

• 高須 靖夫

  東芝

• Park JH

  Samsung Electronics

• Song L.

  IBM

• Kim N-S.

  GLOBALFOUNDRIES Singapore

• Kothari H.

  STMicroelectronics

• Han J-P.

  Infineon Technologies

• Miyake S.

  Renesas Electronics

• Meer H.V.

  GLOBALFOUNDRIES

• Barla K.

  STMicroelectronics

• Sherony M.

  IBM

• Donaton R.

  IBM

• Wachnik R.

  IBM

• Chudzik M.

  IBM

• Sudijono J.

  GLOBALFOUNDRIES Singapore

• Ku J.-H.

  Samsung Electronics

• Kim J.D.

  Samsung Electronics

• Sekine M.

  Renesas Electronics

• Johnson S.

  GLOBALFOUNDRIES

• Neumueller W.

  Infineon Technologies

• Sampson R.

  STMicroelectronics

• Divakaruni R.

  IBM

• Narayanan V.

  Ibm

もっと見る 閉じる

著作論文

• Gate First PFET Poly-Si/TiN/Al_2O_3 Gate Stacks with Inversion Thicknesses Less than 15A for High Performance or Low Power CMOS Applications
• A Study of NBTI and PBTI (Charge Trapping) in High k Stacks with NiSi, TiN, Re Gates
• High-K/Metal Gate MOSFETsにおける新しいレイアウト依存性(IEDM特集(先端CMOSデバイス・プロセス技術))

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