Oxygen-Vacancy-Induced V_t shift in La-containing Devices
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Ragnarsson L.-a.
Imec
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YU H.
IMEC
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BIESEMANS S.
IMEC
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POURTOIS G.
IMEC
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PANTISANO L.
IMEC
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Groeseneken G.
Imec And Also At Ku
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ABSIL P.
IMEC
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NIWA M.
Matsushita Electric Industrial Co., Ltd.
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Cho H.-j.
Samsung
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MITSUHASHI R.
Matsushita assignee at IMEC
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CHANG V.
TSMC
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ADELMANN C.
IMEC
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SCHRAM T.
IMEC
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VAN DER
IMEC and also at KU
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HARADA Y.
Matsushita Electric Industrial Co. Ltd.
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VELOSO A.
IMEC
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IKEDA A.
Matsushita Ltd.
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O'connor R.
Imec
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O'sullivan B.
Imec
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Niwa M.
Matsushita Electric Industrial Co. Ltd.
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Mitsuhashi R.
Matsushita Ltd.
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- Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application
- Characteristics and Correlated Fluctuations of the Gate and Substrate Current after Oxide Soft-Breakdown
- Oxygen-Vacancy-Induced V_t shift in La-containing Devices
- Perspective on Emerging Devices and their Impact on Scaling Technologies