ABSIL P. | IMEC
スポンサーリンク
概要
関連著者
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ABSIL P.
IMEC
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BIESEMANS S.
IMEC
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Severi S.
Imec
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DE MEYER
IMEC
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JURCZAK M.
IMEC
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NIWA M.
Matsushita Electric Industrial Co., Ltd.
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Niwa M.
Matsushita Electric Industrial Co. Ltd.
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Ragnarsson L.-a.
Imec
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Ragnarsson L-a
Imec
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Van Daele
Imec
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YU H.
IMEC
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POURTOIS G.
IMEC
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PANTISANO L.
IMEC
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Groeseneken G.
Imec And Also At Ku
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PAWLAK B.
Philips Research Leuven
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DUFFY R.
Philips Research Leuven
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KERNER C.
IMEC
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MCCOY S.
Mattson Technology Canada
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GELPEY J.
Mattson Technology Canada
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SELINGER T.
Mattson Technology Canada
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NODA T.
Matsushita Electric Industrial Co., Ltd.
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VANDERVORST W.
IMEC
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FELCH S.
Applied Materials
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PARIHAR V.
Applied Materials
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VRANCKEN C.
IMEC
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HOFFMANN T.
IMEC
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FALPIN A.
IMEC
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JANNSSENS T.
IMEC
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BENDER H.
IMEC
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EYBEN P.
IMEC
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SCHREUTELKAMP R.
Applied Materials
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NOURI F.
Applied Materials
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Cho H.-j.
Samsung
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MITSUHASHI R.
Matsushita assignee at IMEC
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CHANG V.
TSMC
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ADELMANN C.
IMEC
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SCHRAM T.
IMEC
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VAN DER
IMEC and also at KU
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HARADA Y.
Matsushita Electric Industrial Co. Ltd.
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VELOSO A.
IMEC
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IKEDA A.
Matsushita Ltd.
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Wise R.
Texas Instruments
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MACHKAOUTSAN V.
ASM Belgium
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VERHEYEN P.
IMEC
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TOMASINI P.
ASM America Inc.
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ENEMAN G.
IMEC
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LOO R.
IMEC
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THOMAS S.
ASM America Inc.
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LU J.
Texas Instruments assignee to IMEC
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WEIJTMANS J.
Texas Instruments
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O'connor R.
Imec
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O'sullivan B.
Imec
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Mitsuhashi R.
Matsushita Ltd.
著作論文
- Integration of ultra shallow junctions in PVD TaN nMOS transistors with Flash Lamp Annealing
- Study of Dopant Diffusion and Defect Evolution for Advanced Ultra Shallow Junctions based on Atomistic Modeling
- SiGe Recessed Source-Drain (RSD) Stressors for PMOS : Effect of Device Integration Flow and Increased Ge Content on Electrical Performance
- Oxygen-Vacancy-Induced V_t shift in La-containing Devices