Study of Dopant Diffusion and Defect Evolution for Advanced Ultra Shallow Junctions based on Atomistic Modeling

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• Severi S.

  Imec

• Van Daele

  Imec

• BIESEMANS S.

  IMEC

• DE MEYER

  IMEC

• ABSIL P.

  IMEC

• JURCZAK M.

  IMEC

• NODA T.

  Matsushita Electric Industrial Co., Ltd.

• VANDERVORST W.

  IMEC

• FELCH S.

  Applied Materials

• PARIHAR V.

  Applied Materials

• VRANCKEN C.

  IMEC

• HOFFMANN T.

  IMEC

• FALPIN A.

  IMEC

• JANNSSENS T.

  IMEC

• BENDER H.

  IMEC

• EYBEN P.

  IMEC

• NIWA M.

  Matsushita Electric Industrial Co., Ltd.

• SCHREUTELKAMP R.

  Applied Materials

• NOURI F.

  Applied Materials

• Niwa M.

  Matsushita Electric Industrial Co. Ltd.

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• Study of Dopant Diffusion and Defect Evolution for Advanced Ultra Shallow Junctions based on Atomistic Modeling
• SiGe Recessed Source-Drain (RSD) Stressors for PMOS : Effect of Device Integration Flow and Increased Ge Content on Electrical Performance
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