NIWA M. | Matsushita Electric Industrial Co., Ltd.
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概要
関連著者
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NIWA M.
Matsushita Electric Industrial Co., Ltd.
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Niwa M.
Matsushita Electric Industrial Co. Ltd.
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BIESEMANS S.
IMEC
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ABSIL P.
IMEC
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MITSUHASHI R.
Matsushita assignee at IMEC
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Mitsuhashi R.
Matsushita Ltd.
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Severi S.
Imec
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Ragnarsson L.-a.
Imec
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Van Daele
Imec
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YU H.
IMEC
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POURTOIS G.
IMEC
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PANTISANO L.
IMEC
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Heyns M.
Imec Vzw
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De Gendt
Imec Kapeldreef
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De Gendt
Imec Vzw
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Groeseneken G.
Imec And Also At Ku
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DE MEYER
IMEC
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JURCZAK M.
IMEC
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NODA T.
Matsushita Electric Industrial Co., Ltd.
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VANDERVORST W.
IMEC
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FELCH S.
Applied Materials
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PARIHAR V.
Applied Materials
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VRANCKEN C.
IMEC
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HOFFMANN T.
IMEC
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FALPIN A.
IMEC
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JANNSSENS T.
IMEC
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BENDER H.
IMEC
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EYBEN P.
IMEC
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SCHREUTELKAMP R.
Applied Materials
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NOURI F.
Applied Materials
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Cho H.-j.
Samsung
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YAMAMOTO K.
Matsushita assignee at IMEC
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HAYASHI S.
Semiconductor Company, Matsushita Electric Ind., Co., Ltd.
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HARADA Y.
Semiconductor Company, Matsushita Electric Ind., Co., Ltd.
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ROTHCHILD A.
IMEC vzw
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HOFFMANN T.
IMEC vzw
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KUBICEK S.
IMEC vzw
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BIESEMANS S.
IMEC vzw
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KUBOTA M.
Semiconductor Company, Matsushita Electric Ind., Co., Ltd.
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CHANG V.
TSMC
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ADELMANN C.
IMEC
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SCHRAM T.
IMEC
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VAN DER
IMEC and also at KU
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HARADA Y.
Matsushita Electric Industrial Co. Ltd.
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VELOSO A.
IMEC
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IKEDA A.
Matsushita Ltd.
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O'connor R.
Imec
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O'sullivan B.
Imec
著作論文
- Study of Dopant Diffusion and Defect Evolution for Advanced Ultra Shallow Junctions based on Atomistic Modeling
- Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application
- Oxygen-Vacancy-Induced V_t shift in La-containing Devices