Groeseneken G. | Imec And Also At Ku
スポンサーリンク
概要
関連著者
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Groeseneken G.
Imec And Also At Ku
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DEGRAEVE R.
IMEC
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Degraeve R.
Imec Kapeldreef
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KAUERAUF T.
IMEC, Kapeldreef
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Kauerauf T.
Imec Kapeldreef
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Roussel Ph.
Imec Kapeldreef
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GROESENEKEN G.
IMEC
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DE GENDT
IMEC, Kapeldreef
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De Gendt
Imec Kapeldreef
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Ragnarsson L-a.
Imec Kapeldreef
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KAUERAUF T.
IMEC
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ZAHID M.
John Moores University Liverpool
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BRUNCO D.
Intel assignee at IMEC
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DE GENDT
IMEC
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CHO M.
IMEC, Kapeldreef
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CRUPI F.
University of Calabria
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POURTOIS G.
IMEC
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PANTISANO L.
IMEC
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Kaczer B.
Imec Kapeldreef
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Ragnarsson L.-a.
Imec
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YU H.
IMEC
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BIESEMANS S.
IMEC
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CARTIER E.
IBM Semiconductor Research and Development Center
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CHO M.
IMEC
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KACZER B.
IMEC
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GROESENEKEN G.
IMEC, Kapeldreef
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DEGRAEVE R.
IMEC, Kapeldreef
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RAGNARSSON L-A.
IMEC, Kapeldreef
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KACZER B.
IMEC, Kapeldreef
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ROUSSEL Ph.
IMEC, Kapeldreef
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HOUSSA M.
IMEC
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KWAK D.
Samsung Electronics c/o IMEC
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KERBER A.
Infineon Technologies
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AUTRAN J.
University of Provence
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HEYNS M.
IMEC
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VAN HOUDT
IMEC vzw.
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Van Houdt
Imec
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Cartier E.
Ibm
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ABSIL P.
IMEC
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NIWA M.
Matsushita Electric Industrial Co., Ltd.
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GOVOREANU B.
IMEC
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KAUERAUF T.
Katholieke Universiteit Leuven, ESAT Dept.
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MAGNUS W.
IMEC
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WELLEKENS D.
IMEC
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GROESENEKEN G.
Katholieke Universiteit Leuven, ESAT Dept.
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Cho H.-j.
Samsung
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MITSUHASHI R.
Matsushita assignee at IMEC
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CRUPI F.
Department of Information Engineering, University of Pisa
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NIGAM T.
IMEC
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MAES H.
IMEC
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CHANG V.
TSMC
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ADELMANN C.
IMEC
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SCHRAM T.
IMEC
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VAN DER
IMEC and also at KU
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HARADA Y.
Matsushita Electric Industrial Co. Ltd.
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VELOSO A.
IMEC
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IKEDA A.
Matsushita Ltd.
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O'connor R.
Imec
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O'sullivan B.
Imec
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Niwa M.
Matsushita Electric Industrial Co. Ltd.
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Mitsuhashi R.
Matsushita Ltd.
著作論文
- Degradation and Breakdown of Sub-1nm EOT HfO_2/Metal Gate Stacks
- Degradation and Breakdown of Sub-1nm EOT HfO_2/Metal Gate Stacks
- Reliability Issues in High-k Stacks
- Feasibility analysis of direct tunneling through medium-κ dielectrics for embedded RAM applications
- Characteristics and Correlated Fluctuations of the Gate and Substrate Current after Oxide Soft-Breakdown
- Oxygen-Vacancy-Induced V_t shift in La-containing Devices