Breakdown and Recovery of Thin Gate Oxides
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-06-15
著者
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Mertens P
Interuniversity Microelectronics Center
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Heyns M
Interuniv. Microelectronics Center Leuven Bel
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Heyns Marc
Interuniversity Microelectronics Centre
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MERTENS Paul
Interuniversitair Micro-Electronica Centrum
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BEARDA Twan
Interuniversitary Micro-Electronics Center
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WOERLEE Pierre
University of Twente
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WALLINGA Hans
University of Twente
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Bearda T
Interuniv. Microelectronics Center Leuven Bel
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Mertens Paul
Interuniversity Microelectronics Center
-
Heyns Marc
Interuniversitary Micro-Electronics Center
関連論文
- Stress in Thin Micro-Zone-Molten Crystalline Silicon Films on Solid Substrates
- Current-Voltage Characteristics of Gate Oxides after Hard Breakdown
- Morphology Change of Artificial Crystal Originated Particles, and the Effect on Gate Oxide Integrity
- Breakdown and Recovery of Thin Gate Oxides
- Fabrication and Characterization of Artificial Crystal Originated Particles
- Impact of Organic Contamination on Thin Gate Oxide Quality
- H_2O_2 Decomposition and Its Impact on Silicon Surface Roughening and Gate Oxide Integrity
- Critical Parameters for Obtaining Low Particle Densities on a Si Surface in an HF-Last Process
- Gate Voltage Dependence of Reliability for Ultra-Thin Oxides
- Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime
- Reliability of Ultra-Thin Gate Oxides Below 3nm in the Direct Tunneling Regime
- Reliability of Ultra-Thin Gate Oxide Below 3 nm in the Direct Tunneling Regime