Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2012-01-25

著者

• LUCZNIK Boleslaw

  Institute of High Pressure Physics, Polish Academy of Science

• DOMAGALA Jaroslaw

  Institute of Physics PAS

• Bockowski Michal

  Institute Of High Pressure Pas

• TEISSEYRE Henryk

  Institute of Physics PAS

• RESZKA Anna

  Institute of Physics PAS

• KOWALSKI Bogdan

  Institute of Physics PAS

• KAMLER Grzegorz

  Institute of High Pressure PAS

• GRZEGORY Izabella

  Institute of High Pressure PAS

• Lucznik Boleslaw

  Institute Of High Pressure Pas

関連論文

• Doping-Induced Contrast in the Refractive Index for GaInN/GaN Structures at Telecommunication Wavelengths
• Lateral Control of Indium Content and Wavelength of III-Nitride Diode Lasers by Means of GaN Substrate Patterning
• Characterization of the Nonpolar GaN Substrate Obtained by Multistep Regrowth by Hydride Vapor Phase Epitaxy
• Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
• Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
• Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds
• Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates (Special Issue : Recent Advances in Nitride Semiconductors)

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