Effect of Annealing-Induced Interdiffusion on the Electronic Structure of Mid Infrared Emitting GaInAsSb/AlGaInAsSb Quantum Wells

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概要

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• There has been investigated the effect of post-growth-annealing-induced interdiffusion process, and hence interface intermixing, on the electronic structure of Ga0.35In0.65As0.32Sb0.68/Al0.25Ga0.50In0.25As0.24Sb0.76 single quantum well designed to emit light in the range of about 3 μm. The band structure and optical transitions have been calculated based on the single band effective mass model and Fick's interdiffusion law. The calculation results are consistent with the experimentally observed transitions obtained by employing modulation spectroscopy. Our studies indicate that the intermixing processes in this kind of quantum wells are predominantly induced by the interdiffusion of group III atoms. The derived effective diffusion coefficient has been estimated to be of the order of $10^{-21}$ m2 s-1 for 480 °C annealing temperature.

• 2011-03-25

著者

• Sek Grzegorz

  Institute Of Physics Wroclaw University Of Technology

• Misiewicz Jan

  Institute Of Physics Wroclaw University Of Technology

• Motyka Marcin

  Institute Of Physics Wroclaw University Of Technology

• Misiewicz Jan

  Institute of Physics, Wroc$ŀ$aw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroc$ŀ$aw, Poland

• Kubisa Maciej

  Institute of Physics, Wroc$ŀ$aw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroc$ŀ$aw, Poland

• Motyka Marcin

  Institute of Physics, Wroc$ŀ$aw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroc$ŀ$aw, Poland

• Rouillard Yves

  Institut d'Electronique du Sud, Université Montpellier 2-CNRS, UMR 5214, Place Eugène Bataillon, F-34095 Montpellier Cedex 5, France

• Boissier Guilhem

  Institut d'Electronique du Sud, Université Montpellier 2-CNRS, UMR 5214, Place Eugène Bataillon, F-34095 Montpellier Cedex 5, France

• Ryczko Krzysztof

  Institute of Physics, Wroc$ŀ$aw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroc$ŀ$aw, Poland

• Belahsene Sofiane

  Institut d'Electronique du Sud, Université Montpellier 2-CNRS, UMR 5214, Place Eugène Bataillon, F-34095 Montpellier Cedex 5, France

• Janiak Filip

  Institute of Physics, Wroc$ŀ$aw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroc$ŀ$aw, Poland

• Janiak Filip

  Institute of Physics, Wroc$ŀ$aw University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wroc$ŀ$aw, Poland

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