Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–Oxide–Semiconductor Heterostructure Field Effect Transistors

概要

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We report on the technology of a very thin oxidized Al sputtered film used for gate insulation and passivation in Al2O3/AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOSHFETs). Their transport properties are presented. The MOSHFET with the Al2O3 layer had improved static output and transfer characteristics compared with the reference heterostructure field-effect transistors (HFETs): (1) their saturation drain current $I_{\text{DS}}$ was ${\sim}600$ mA mm-1 at gate voltage $V_{\text{G}}=1$ V (HFETs with 2.5 μm gates had ${\sim}430$ mA mm-1); (2) their transconductance was 116–140 mS mm-1 (HFETs had ${\sim}70$ mS mm-1).
2010-04-25