Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-Doped TiO_2 Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2010-09-25
著者
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CHICHIBU Shigefusa
CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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Chichibu Shigefusa
Cantech Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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HAZU Kouji
CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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FOUDA Aly
CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University
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NAKAYAMA Tokuyuki
Sumitomo Metal Mining Co., Ltd.
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TANAKA Akikazu
Sumitomo Metal Mining Co., Ltd.
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Fouda Aly
Cantech Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Hazu Kouji
Cantech Institute Of Multidisciplinary Research For Advanced Materials Tohoku University
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Tanaka Akikazu
Sumitomo Metal Mining Co. Ltd.
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Nakayama Tokuyuki
Sumitomo Metal Mining Co. Ltd.
関連論文
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- Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-Doped TiO_2 Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method
- Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an Al0.2Ga0.8N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates
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