Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an Al0.2Ga0.8N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates

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概要

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• A characteristic photoluminescence signal is identified for a two-dimensional electron gas (2DEG) confined at an Al0.2Ga0.8N/GaN heterointerface fabricated on an ammonothermal GaN (AT-GaN) substrate. The use of a gas-phase synthesized NH4Cl acidic mineralizer reduced oxygen contamination in AT-GaN by two orders of magnitude, and metalorganic vapor phase epitaxy of atomically smooth, coherent AlGaN/GaN heterostructures was realized. The emission originating from the 2DEG is interpreted using self-consistent Schrödinger--Poisson calculation, taking the interfacial immobile charge due to polarization discontinuity into account. The initial decay time at low temperature was close to that of the bulk free excitons, reflecting the lifetime of photoexcited holes.

• 2011-04-25

著者

• ONUMA Takeyoshi

  CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University

• Chichibu Shigefusa

  Cantech Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Hazu Kouji

  Cantech Institute Of Multidisciplinary Research For Advanced Materials Tohoku University

• Ehrentraut Dirk

  World Premier International Research Center Initiative--Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Kagamitani Yuji

  CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

• Fukuda Tsuguo

  World Premier International Research Center Initiative--Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan

• Ishiguro Tohru

  CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

• Hazu Kouji

  CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

• Onuma Takeyoshi

  CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

• Chichibu Shigefusa

  CANTech, Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, Sendai 980-8577, Japan

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• Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an Al0.2Ga0.8N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates
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