Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)

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概要

• 論文の詳細を見る
• The Japan Society of Applied Physicsの論文

著者

• SCHWARZ Ulrich

  Fraunhofer Institute for Applied Solid State Physics IAF

• Solowan Hans-Michael

  Fraunhofer Institute for Applied Solid State Physics IAF, D-79108 Freiburg, Germany

• Danhof Julia

  Fraunhofer Institute for Applied Solid State Physics IAF, D-79108 Freiburg, Germany

関連論文

• Self-Pulsation at Zero Absorber Bias in GaN-Based Multisection Laser Diodes
• Unequal Pumping of Quantum Wells in GaN-Based Laser Diodes
• Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well
• Blue Superluminescent Light-Emitting Diodes with Output Power above 100 mW for Picoprojection
• Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias
• Direct Observation of Charge Carrier Diffusion and Localization in an InGaN Multi Quantum Well (Special Issue : Recent Advances in Nitride Semiconductors)
• Impact of Band Structure and Absorber Dynamics on Self-Q-Switching in GaN-Based Multisection Laser Diodes at High Reverse Bias

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